Power Transistors2SD1535Silicon NPN triple diffusion planar type DarlingtonFor high power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink wi

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

Power Transistors2SD1539, 2SD1539ASilicon NPN epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SB1071 and 2SB1071A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (T

isc Silicon NPN Power Transistor 2SD1535DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

isc Silicon NPN Power Transistor 2SD1533DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

isc Silicon NPN Power Transistor 2SD1530DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

isc Silicon NPN Power Transistor 2SD1531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 4VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low