Биполярный транзистор 2SD1579L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1579L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hfe): 4000
Корпус транзистора: SP8
2SD1579L Datasheet (PDF)
2sd1576.pdf
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2sd1577.pdf
Silicon Diffused Power Transistor2SD1577GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in switching power circuites of colour television receiversTOP-3FaQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCo
2sd157.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated co
2sd1577.pdf
isc Silicon NPN Power Transistor 2SD1577DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd1571.pdf
isc Silicon NPN Power Transistor 2SD1571DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V (Min)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications.ABSOLUTE MAXIMUM RA
2sd1575.pdf
isc Silicon NPN Power Transistor 2SD1575DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
2sd1572.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1572DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
2sd1576.pdf
isc Silicon NPN Power Transistor 2SD1576DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050