2SD155. Аналоги и основные параметры
Наименование производителя: 2SD155
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO66
Аналоги (замена) для 2SD155
- подборⓘ биполярного транзистора по параметрам
2SD155 даташит
..1. Size:181K inchange semiconductor
2sd155.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD155 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appli
0.1. Size:36K hitachi
2sd1559.pdf 

2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 3 k 400 (Typ) (Typ) 1 3 2 3 2SD1559 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltag
0.2. Size:69K wingshing
2sd1556.pdf 

NPN TRIPLE DIFFUSED 2SD1556 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co
0.3. Size:29K wingshing
2sd1555.pdf 

NPN TRIPLE DIFFUSED 2SD1555 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
0.4. Size:29K wingshing
2sd1554.pdf 

NPN TRIPLE DIFFUSED 2SD1554 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
0.5. Size:76K jmnic
2sd1556.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
0.6. Size:77K jmnic
2sd1555.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
0.7. Size:76K jmnic
2sd1553.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
0.8. Size:78K jmnic
2sd1554.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
0.9. Size:205K inchange semiconductor
2sd1550.pdf 

isc Product Specification isc Silicon NPN Power Transistor 2SD1550 DESCRIPTION High Breakdown Voltage- V = 1000V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
0.10. Size:220K inchange semiconductor
2sd1559.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1559 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type 2SB1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power
0.11. Size:204K inchange semiconductor
2sd1552.pdf 

isc Product Specification isc Silicon NPN Power Transistor 2SD1552 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
0.13. Size:116K inchange semiconductor
2sd1556.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter
0.14. Size:213K inchange semiconductor
2sd1555.pdf 

isc Silicon NPN Power Transistor 2SD1555 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
0.15. Size:214K inchange semiconductor
2sd1553.pdf 

isc Silicon NPN Power Transistor 2SD1553 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
0.16. Size:204K inchange semiconductor
2sd1551.pdf 

isc Product Specification isc Silicon NPN Power Transistor 2SD1551 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
0.17. Size:214K inchange semiconductor
2sd1554.pdf 

isc Silicon NPN Power Transistor 2SD1554 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Другие транзисторы: 2SD1542, 2SD1543, 2SD1544, 2SD1545, 2SD1546, 2SD1547, 2SD1548, 2SD1549, 2222A, 2SD1550, 2SD1551, 2SD1552, 2SD1553, 2SD1554, 2SD1555, 2SD1556, 2SD1557