DATA SHEETSILICON POWER TRANSISTOR2SD1588NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Id

DATA SHEETSILICON TRANSISTOR2SD1582NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and high voltage. This transistor isavailable for broad applications as variety of drives.FEATURES Ultra high hFEhFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300

DATA SHEETSILICON TRANSISTOR2SD1581NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and low power loss. This transistor isideal for use in high current drives such as mortars, relays, andramps.FEATURES Ultra high hFEhFE = 800 to 3200 (@

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM

Product Specification www.jmnic.comSilicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION With TO-220Fa package VCEO60V;VEBO7V;IC(DC)3.0A Complement to type 2SB1094 APPLICATIONS For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1583-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1584-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

isc Silicon NPN Darlington Power Transistor 2SD1589DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2AFE CComplement to Type 2SB1098Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

isc Silicon NPN Power Transistor 2SD1587DESCRIPTIONHigh Collector Current:: I = 2.0ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 500mACE(sat) CComplement to Type 2SB1096Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SD1588DESCRIPTIONLarge Current Capacity- I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SB1097Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power

isc Silicon NPN Power Transistor 2SD1585DESCRIPTIONHigh Collector Current:: I = 3ACLow Collector Saturation Voltage: V = 1.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SD1580DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 4ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM