2SD1590 datasheet и подбор замены

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 2sd1590.pdf 

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 2sd1590.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A FE C Complement to Type 2SB1099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switc

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 2sd1592.pdf 

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, a

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 2sd1593.pdf 

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 2sd1591.pdf 

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 2sd1595.pdf 

 8.5. Size:118K  jmnic
 2sd1594.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 8.6. Size:107K  jmnic
 2sd1591.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A

 8.7. Size:193K  inchange semiconductor
 2sd1592.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 400(Min) @ I = 2A, V = 2V FE C CE Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

 8.8. Size:215K  inchange semiconductor
 2sd1594.pdf 

isc Silicon NPN Power Transistor 2SD1594 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U

 8.9. Size:216K  inchange semiconductor
 2sd1591.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1591 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 10A FE C Complement to Type 2SB1100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed hig

 8.10. Size:186K  inchange semiconductor
 2sd1599.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1599 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

 8.11. Size:215K  inchange semiconductor
 2sd1597.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1597 DESCRIPTION Collector Current -I = 30A C High DC Current Gain- h = 1000(Min)@ I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. AB