2SD160 datasheet, аналоги, основные параметры
Наименование производителя: 2SD160 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO8
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Аналоги (замена) для 2SD160
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2SD160 даташит
0.1. Size:84K utc
2sd1609.pdf 
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNIT Collector-Base Voltage BVCBO 160 V Collector-Emitter Voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Curre
0.3. Size:35K hitachi
2sd1606.pdf 
2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 2.6 k 160 2 3 (Typ) (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector cu
0.4. Size:32K hitachi
2sd1609 2sd1610.pdf 
2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEB
0.7. Size:210K inchange semiconductor
2sd1601.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
0.8. Size:212K inchange semiconductor
2sd1608.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 4A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS
0.9. Size:210K inchange semiconductor
2sd1602.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
0.10. Size:210K inchange semiconductor
2sd1606.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1606 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 3A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
0.11. Size:211K inchange semiconductor
2sd1604.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1104 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
0.12. Size:193K inchange semiconductor
2sd1609.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1609 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Complement to Type 2SB1109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and high-voltage amplifier applica
0.13. Size:210K inchange semiconductor
2sd1605.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1605 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1.5A FE C Complement to Type 2SB1105 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM
0.14. Size:211K inchange semiconductor
2sd1603.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
0.15. Size:189K inchange semiconductor
2sd1600.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
Другие транзисторы: 2SD1593, 2SD1594, 2SD1595, 2SD1597, 2SD1598, 2SD1599, 2SD159F, 2SD16, 2SD1047, 2SD1600, 2SD1601, 2SD1602, 2SD1603, 2SD1604, 2SD1605, 2SD1606, 2SD1607
