2SD1630 datasheet и подбор замены

 ..1. Size:125K  nec
 2sd1630.pdf 

 8.1. Size:161K  toshiba
 2sd1631.pdf 

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (

 8.2. Size:44K  rohm
 2sd1638.pdf 

 8.3. Size:47K  rohm
 2sd1637.pdf 

 8.4. Size:92K  panasonic
 2sd1632.pdf 

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 8.5. Size:107K  panasonic
 2sd1634.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.6. Size:90K  panasonic
 2sd1633.pdf 

Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit mm For voltage switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Rating

 8.7. Size:116K  jmnic
 2sd1634.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE

 8.8. Size:69K  jmnic
 2sd1638.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co

 8.9. Size:211K  inchange semiconductor
 2sd1632.pdf 

isc Silicon NPN Power Transistor 2SD1632 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.10. Size:216K  inchange semiconductor
 2sd1634.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1634 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.11. Size:216K  inchange semiconductor
 2sd1633.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1633 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.12. Size:208K  inchange semiconductor
 2sd1638.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1638 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc