Справочник транзисторов. 2SD1652

 

Биполярный транзистор 2SD1652 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1652
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: ISO247

 Аналоги (замена) для 2SD1652

 

 

2SD1652 Datasheet (PDF)

 ..1. Size:356K  sanyo
2sd1652.pdf

2SD1652
2SD1652

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 ..2. Size:214K  inchange semiconductor
2sd1652.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1652DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.1. Size:197K  toshiba
2sd1658.pdf

2SD1652
2SD1652

2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

 8.2. Size:211K  sanyo
2sd1651c.pdf

2SD1652
2SD1652

Ordering number : ENN70862SD1651Cwww.DataSheet4U.comNPN Triple Diffused Planar Silicon Transistor2SD1651CColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD1651C]5.6 Adoption of MBIT process. 3.416.03.1 On-chip

 8.3. Size:347K  sanyo
2sd1653.pdf

2SD1652
2SD1652

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.4. Size:48K  sanyo
2sd1654.pdf

2SD1652

 8.5. Size:346K  sanyo
2sd1656.pdf

2SD1652
2SD1652

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.6. Size:47K  sanyo
2sd1655.pdf

2SD1652

 8.7. Size:41K  wingshing
2sd1651.pdf

2SD1652

NPN TRIPLE DIFFUSED2SD1651 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

 8.8. Size:86K  wingshing
2sd1650.pdf

2SD1652

2SD1650 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PMLSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

 8.9. Size:81K  jmnic
2sd1651.pdf

2SD1652
2SD1652

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1651 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc

 8.10. Size:85K  jmnic
2sd1650.pdf

2SD1652
2SD1652

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1650 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT T

 8.11. Size:216K  inchange semiconductor
2sd1653.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1653DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 8.12. Size:214K  inchange semiconductor
2sd1651.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1651DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.13. Size:214K  inchange semiconductor
2sd1650.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1650DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

 8.14. Size:216K  inchange semiconductor
2sd1654.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1654DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 8.15. Size:215K  inchange semiconductor
2sd1656.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1656DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 8.16. Size:215K  inchange semiconductor
2sd1655.pdf

2SD1652
2SD1652

isc Silicon NPN Power Transistor 2SD1655DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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