2SD1661M datasheet и подбор замены

 ..1. Size:91K  1
 2sd1660m 2sd1661m 2sd1665m 2sd1962m.pdf 

 8.1. Size:136K  toshiba
 2sd1662.pdf 

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit mm High DC current gain hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta

 8.2. Size:136K  sanyo
 2sd1667.pdf 

Ordering number 2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.4V max/IC=( )3A, IB=( )0.3A.

 8.3. Size:30K  sanyo
 2sb1133 2sd1666.pdf 

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7

 8.4. Size:106K  sanyo
 2sd1669.pdf 

Ordering number 2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max.

 8.5. Size:104K  sanyo
 2sd1668.pdf 

Ordering number 2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.4V max. Wide ASO lead

 8.6. Size:118K  rohm
 2sd1664.pdf 

Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (

 8.7. Size:171K  utc
 2sd1664.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE(SAT) VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

 8.8. Size:118K  secos
 2sd1664.pdf 

2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0

 8.9. Size:426K  jiangsu
 2sd1664.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

 8.10. Size:749K  htsemi
 2sd1664.pdf 

2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

 8.11. Size:268K  lge
 2sd1664 sot-89.pdf 

2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

 8.12. Size:255K  wietron
 2sd1664.pdf 

2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collecto

 8.13. Size:310K  shenzhen
 2sd1664.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V

 8.14. Size:966K  blue-rocket-elect
 2sd1664.pdf 

2SD1664 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , 2SB1132 Low saturation voltage, complements the 2SB1132. / Applications Medium power amplifier applications. / Equ

 8.15. Size:560K  semtech
 st2sd1664u.pdf 

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.16. Size:391K  semtech
 st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf 

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.17. Size:1283K  kexin
 2sd1664.pdf 

SMD Type Transistors NPN Transistors 2SD1664 1.70 0.1 Features Low VCE(sat) Compliments to 2SB1132 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) 1 A IC PW=20ms, duty=1/2 2 A Collector Power Di

 8.18. Size:170K  chenmko
 2sd1664gp.pdf 

CHENMKO ENTERPRISE CO.,LTD 2SD1664GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density. * Low voltage (Max.=32V) . * High saturation current capability. * Voltage controlled small signal switch. 4.6MAX. 1

 8.19. Size:269K  cn shikues
 2sd1664q 2sd1664r.pdf 

 8.20. Size:221K  cn hottech
 2sd1664.pdf 

Plastic-Encapsulate Transistors FEATURES 2SD1664 (NPN) Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1 A 1. BASE Collector Power dissipa

 8.21. Size:214K  inchange semiconductor
 2sd1666.pdf 

isc Silicon NPN Power Transistor 2SD1666 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI

 8.22. Size:220K  inchange semiconductor
 2sd1667.pdf 

isc Silicon NPN Power Transistor 2SD1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,and other general hig

 8.23. Size:208K  inchange semiconductor
 2sd1663.pdf 

isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.24. Size:214K  inchange semiconductor
 2sd1669.pdf 

isc Silicon NPN Power Transistor 2SD1669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.) CE(sat) Wide Area of Safe Operation Complement to Type 2SB1136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high speed inverters,c

 8.25. Size:214K  inchange semiconductor
 2sd1668.pdf 

isc Silicon NPN Power Transistor 2SD1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.) CE(sat) Wide Area of Safe Operation Complement to Type 2SB1135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high speed inverters,c