2SD1685E - Даташиты. Аналоги. Основные параметры

Ordering number EN2042A NPN Epitaxial Planar Silicon Transistor 2SD1685 20V/5A Switching Applications Applications Package Dimensions Strobe, voltage regulators, relay drivers, lamp unit mm drivers. 2042B [2SD1685] 8.0 Features 4.0 3.3 1.0 1.0 Low saturation voltage. Large current capacity. 3.0 Fast switching time. No insulator required when mounting becau

Ordering number 2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042A [2SB1143/2SD1683] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C C

Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

Ordering number 2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions Adoption of FBET and MBIT processes. unit mm High breakdown voltage. 2042B Low saturation voltage. [2SB1144/2SD1684] Plastic-covered heat sink facilitating high-density mounting. 1 Emitter 2 Collector 3 Base ( ) 2

Ordering number 2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions Converters, relay drivers, low-voltage and high unit mm power AF Amplifier. 2042A [2SB1141/2SD1681] Features Low saturation voltage and excellent linearity of hFE. Wide ASO. B Base C Collector E Emitter ( ) 2SB1141

Ordering number 2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2042A Features [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C Collector ( )

isc Silicon NPN Power Transistor 2SD1683 DESCRIPTION High Collector Current-I = 4A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A CE(sat) C Complement to Type 2SB1143 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment. ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SD1684 DESCRIPTION Collector Saturation Voltage Low V = -0.5V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1144 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon NPN Power Transistor 2SD1680 DESCRIPTION Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V