2SD1708 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1708
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 6000
Корпус транзистора: TO126
Аналоги (замена) для 2SD1708
- подборⓘ биполярного транзистора по параметрам
2SD1708 даташит
8.4. Size:93K panasonic
2sd1707.pdf 
Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1156 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install
8.5. Size:92K panasonic
2sd1705.pdf 
Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1154 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install
8.7. Size:1053K kexin
2sd1702.pdf 
SMD Type Transistors NPN Transistors 2SD1702 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
8.8. Size:218K inchange semiconductor
2sd1707.pdf 
isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 8A CE(sat) C Complement to Type 2SB1156 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications
8.9. Size:215K inchange semiconductor
2sd1705.pdf 
isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 6A CE(sat) C Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications
8.10. Size:215K inchange semiconductor
2sd1709.pdf 
isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
8.11. Size:216K inchange semiconductor
2sd1706.pdf 
isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications
Другие транзисторы: 2SD1700, 2SD1701, 2SD1702, 2SD1703, 2SD1704, 2SD1705, 2SD1706, 2SD1707, 13009, 2SD1709, 2SD170A, 2SD171, 2SD1710, 2SD1711, 2SD171-1, 2SD1712, 2SD171-2
