2SD1719 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer Unit mm 8.5 0.2 3.4 0.3 ratio 6.0 0.2 1.0 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- 0 to 0.4 earity R = 0.5 0.8 0.1 R = 0.5 2.54 0.3 High emitter-base voltage (Collector open) VEBO 1.0 0.1 1.4

Ordering number EN7200 2SD1710C SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SD1710C 500V / 7A Switching Regulator Applications Features High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25

NPN TRIPLE DIFFUSED 2SD1711 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base)

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage high speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage high speed switching. / Applications Use in horizontal deflection circuites of color TV. /

isc Silicon NPN Power Transistor 2SD1717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1711 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1710 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1712 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1715 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1160 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1163 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1161 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1713 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1158 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )