Power Transistors2SD1719Silicon NPN triple diffusion planar typeFor power amplification with high forward current transferUnit: mm8.50.2 3.40.3ratio6.00.2 1.00.1 Features High forward current transfer ratio hFE which has satisfactory lin-0 to 0.4earityR = 0.50.80.1R = 0.52.540.3 High emitter-base voltage (Collector open) VEBO1.00.11.4

Ordering number : EN72002SD1710CSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon Transistor2SD1710C500V / 7A Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting.SpecificationsAbsolute Maximum Ratings at Ta=25

NPN TRIPLE DIFFUSED2SD1711 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

Silicon Diffused Power Transistor2SD1710GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflectioncircuites of colour television receiversTO-3PMLQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltagehigh speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltagehigh speed switching. / Applications Use in horizontal deflection circuites of color TV. /

isc Silicon NPN Power Transistor 2SD1717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1162Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1711DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1710DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1712DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1715DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1160Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1163Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1161Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1714DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1713DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1158Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)