Справочник транзисторов. 2SD1723

 

Биполярный транзистор 2SD1723 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1723
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 180 MHz
   Ёмкость коллекторного перехода (Cc): 65 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO247

 Аналоги (замена) для 2SD1723

 

 

2SD1723 Datasheet (PDF)

 ..1. Size:146K  sanyo
2sd1723.pdf

2SD1723 2SD1723

Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE

 8.1. Size:144K  sanyo
2sd1724.pdf

2SD1723 2SD1723

Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E

 8.2. Size:53K  sanyo
2sd1725.pdf

2SD1723 2SD1723

Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1

 8.3. Size:144K  sanyo
2sd1722.pdf

2SD1723 2SD1723

Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE

 8.4. Size:104K  panasonic
2sd1729.pdf

2SD1723 2SD1723

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.5. Size:127K  fuji
2sd1726.pdf

2SD1723 2SD1723

 8.6. Size:213K  inchange semiconductor
2sd1720.pdf

2SD1723 2SD1723

isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

 8.7. Size:215K  inchange semiconductor
2sd1728.pdf

2SD1723 2SD1723

isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.8. Size:215K  inchange semiconductor
2sd1727.pdf

2SD1723 2SD1723

isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.9. Size:215K  inchange semiconductor
2sd1729.pdf

2SD1723 2SD1723

isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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