2SD1727 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD1727 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

Ordering number 2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E E

Ordering number ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043B Features [2SB1168/2SD1725] 8.0 2.0 Low collector-to-emitter saturation voltage. 2.7 4.0 High fT. Excellent linearity of hFE. Short switching time. 1

Ordering number 2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E

Ordering number 2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time. B Base C Collector E

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1728 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1729 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base