2SD173 datasheet, аналоги, основные параметры
Наименование производителя: 2SD173 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO3
Аналоги (замена) для 2SD173
- подборⓘ биполярного транзистора по параметрам
2SD173 даташит
0.1. Size:80K rohm
2sd1733.pdf 
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units mm) Features 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5+0.2 1.6 0.1 -0.1 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181 0.4 0.1 0.5 0.
0.2. Size:114K rohm
2sd1898 2sd1733 2sd1768s 2sd1863.pdf 
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO
0.3. Size:458K rohm
2sd1898 2sd1733.pdf 
2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4
0.4. Size:105K panasonic
2sd1731.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.5. Size:105K panasonic
2sd1732.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.6. Size:105K panasonic
2sd1730.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.7. Size:102K panasonic
2sd1739.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.8. Size:974K kexin
2sd1733.pdf 
SMD Type Transistors NPN Transistors 2SD1733 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.127 +0.1 0.80-0.1 max Complementary to 2SB1181 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame
0.9. Size:209K inchange semiconductor
2sd1735.pdf 
isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.10. Size:215K inchange semiconductor
2sd1731.pdf 
isc Silicon NPN Power Transistor 2SD1731 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
0.11. Size:212K inchange semiconductor
2sd1734.pdf 
isc Silicon NPN Power Transistor 2SD1734 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.12. Size:218K inchange semiconductor
2sd1736.pdf 
isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.13. Size:215K inchange semiconductor
2sd1732.pdf 
isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
0.14. Size:209K inchange semiconductor
2sd1737.pdf 
isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.15. Size:215K inchange semiconductor
2sd1730.pdf 
isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
0.16. Size:210K inchange semiconductor
2sd1738.pdf 
isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.17. Size:209K inchange semiconductor
2sd1739.pdf 
isc Silicon NPN Power Transistor 2SD1739 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
Другие транзисторы: 2SD1725Q, 2SD1725R, 2SD1725S, 2SD1725T, 2SD1726, 2SD1727, 2SD1728, 2SD1729, 2N4401, 2SD1730, 2SD1731, 2SD1732, 2SD1733, 2SD1734, 2SD1735, 2SD1736, 2SD1737
