2SD1730 datasheet и подбор замены

 ..1. Size:105K  panasonic
 2sd1730.pdf 

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 ..2. Size:215K  inchange semiconductor
 2sd1730.pdf 

isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 8.1. Size:80K  rohm
 2sd1733.pdf 

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units mm) Features 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5+0.2 1.6 0.1 -0.1 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181 0.4 0.1 0.5 0.

 8.2. Size:114K  rohm
 2sd1898 2sd1733 2sd1768s 2sd1863.pdf 

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

 8.3. Size:458K  rohm
 2sd1898 2sd1733.pdf 

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

 8.4. Size:105K  panasonic
 2sd1731.pdf 

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 8.5. Size:105K  panasonic
 2sd1732.pdf 

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 8.6. Size:102K  panasonic
 2sd1739.pdf 

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 8.7. Size:974K  kexin
 2sd1733.pdf 

SMD Type Transistors NPN Transistors 2SD1733 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.127 +0.1 0.80-0.1 max Complementary to 2SB1181 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame

 8.8. Size:209K  inchange semiconductor
 2sd1735.pdf 

isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

 8.9. Size:215K  inchange semiconductor
 2sd1731.pdf 

isc Silicon NPN Power Transistor 2SD1731 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 8.10. Size:212K  inchange semiconductor
 2sd1734.pdf 

isc Silicon NPN Power Transistor 2SD1734 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

 8.11. Size:218K  inchange semiconductor
 2sd1736.pdf 

isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

 8.12. Size:215K  inchange semiconductor
 2sd1732.pdf 

isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 8.13. Size:209K  inchange semiconductor
 2sd1737.pdf 

isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

 8.14. Size:210K  inchange semiconductor
 2sd1738.pdf 

isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

 8.15. Size:209K  inchange semiconductor
 2sd1739.pdf 

isc Silicon NPN Power Transistor 2SD1739 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co