2SD1747 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit mm 7.0 0.3 3.5 0.2 Complementary to 2SB1177 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1 Large collector current IC I type package enabling direct sol

Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1175 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1176 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For low-freauency power amplification 3.0 0.2 Complementary to 2SB1172 and 2SB1172A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package e

Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1179 and 2SB1179A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 High-speed switching 0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin to th

Power Transistors 2SD1744 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1174 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

Power Transistors 2SD1743, 2SD1743A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Complementary to 2SB1173 and 2SB1173A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package enabling direct

Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit mm For low-freauency power amplification 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1178 and 2SB1178A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the

SMD Type Transistors NPN Transistors 2SD1745 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 0.80+0.1 max -0.1 Complementary to 2SB1175 2.3 0.60+ 0.1 1 Base - 0.1 +0.15

SMD Type Transistors NPN Transistors 2SD1746 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 0.127 -0.1 Large collector current IC 0.80+0.1 max Complementary to 2SB1176 2.3 0.60+ 0.1 1 Base - 0.1 +0.15

SMD Type Transistors NPN Transistors 2SD1742 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172 + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2 Co

SMD Type Transistors NPN Transistors 2SD1742A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172A + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2