Биполярный транзистор 2SD1747 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1747
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 130 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO218
2SD1747 Datasheet (PDF)
2sd1747.pdf
Power Transistors2SD1747, 2SD1747ASilicon NPN epitaxial planar typeFor power switchingUnit: mm7.0 0.3 3.5 0.2Complementary to 2SB11773.0 0.2Features Low collector to emitter saturation voltage VCE(sat)1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE0.75 0.1 0.4 0.1 Large collector current IC I type package enabling direct sol
2sd1745.pdf
Power Transistors2SD1745Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1175Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder
2sd1746.pdf
Power Transistors2SD1746Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1176Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder
2sd1742.pdf
Power Transistors2SD1742, 2SD1742ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For low-freauency power amplification3.0 0.2Complementary to 2SB1172 and 2SB1172AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)I type package e
2sd1749.pdf
Power Transistors2SD1749, 2SD1749ASilicon NPN triple diffusion planar type DarlingtonFor low-freauency power amplification Unit: mm7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1179 and 2SB1179AFeatures High foward current transfer ratio hFE1.1 0.1 0.85 0.1 High-speed switching0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin toth
2sd1744.pdf
Power Transistors2SD1744Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1174Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder
2sd1743.pdf
Power Transistors2SD1743, 2SD1743ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Complementary to 2SB1173 and 2SB1173AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)I type package enabling direct
2sd1748.pdf
Power Transistors2SD1748, 2SD1748ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor low-freauency power amplification7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1178 and 2SB1178AFeaturesHigh foward current transfer ratio hFE1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1High-speed switchingI type package enabling direct soldering of the radiating fin tothe
2sd1745.pdf
SMD Type TransistorsNPN Transistors2SD1745TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features5.30+0.2 0.50 +0.8-0.2-0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.1270.80+0.1 max-0.1 Complementary to 2SB11752.3 0.60+ 0.1 1 Base- 0.1+0.15
2sd1746.pdf
SMD Type TransistorsNPN Transistors2SD1746TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)0.127-0.1 Large collector current IC 0.80+0.1 max Complementary to 2SB11762.3 0.60+ 0.1 1 Base- 0.1+0.15
2sd1742.pdf
SMD Type TransistorsNPN Transistors2SD1742TO-252 Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.10.80-0.1max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172+ 0.12.3 0.60- 0.1 1 Base+0.154.60 -0.152 Co
2sd1742a.pdf
SMD Type TransistorsNPN Transistors2SD1742ATO-252 Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.10.80-0.1max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172A+ 0.12.3 0.60- 0.1 1 Base+0.154.60 -0.152
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KT8110A
History: KT8110A
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050