2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767high current, IC=0.7A. 4.01.0 2.5 0.52) Complements the 2SB1189 / 2SB1238. (1)(2) Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollec

2SD1767 / 2SD1859TransistorsMedium power transistor (80V, 0.7A)2SD1767 / 2SD1859 External dimensions (Units : mm) Features1) High breakdown voltage, BVCEO=80V, and2SD17674.0high current, IC=0.7A.1.0 2.5 0.52) Complements the 2SB1189 / 2SB1238.(1)(2)(3) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollector-emi

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 Features External dimensions (Units : mm)1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.2 (IC/IB = 2A / 0.2A) 2.3 +0.26.50.2 -0.1C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.9 Structure0.50.10.550.12.30.2 2

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES High Breakdown Voltage and Current 4 Excellent DC Current Gain Linearity Complementary to 2SB1189 123B C AE CLASSIFICATION OF hFE ECProduct-Rank 2SD1767-P 2SD1767-Q 2SD1767-R B D

2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free D-Pack (TO-252)FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184 CLASSIFICATION OF hFE AProduct-Rank 2SD1760-P 2SD1760-Q 2SD1760-RCBDRange 82~180 120~270 180~390

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1189 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR (NPN) TO-252-2L FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 1. BASE Complements the 2SB1184. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1766 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) 2. COLLECTOR Complements to 2SB1188 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector

Equivalent CcircuitBDarlington 2SD1769(2.5k)(200)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)SymbolSymbol 2SD1769 Unit Conditions 2SD1769 Unit0.24.80.210.20.

2SD1766TRANSISTOR (NPN)FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 40 V3. EMITTER 3 VCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 2

2SD1761(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3FeaturesLow collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in

2SD1760(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5

2SD1766SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) MIN0.53 Complements to 2SB1188 0.400.480.442x)0.13 B0.35 0.37 1.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

FM120-M WILLASTHRU 2SD1766 SOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free Produc Package outlineFeaturesTRANSISTOR c(NPN) ss design, excellent power dissipation offers Bat h proce bFEATURES etter reverse leakage current and thermal resistance.SOT-89 SOD-123H Low profile surfa

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Stor

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 APeak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A0.5 Collector Power Dissipation PC W 2 1) Junction T

SMD Type TransistorsNPN Transistors2SD17671.70 0.1 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.0.42 0.10.46 0.1 Complementary to 2SB11891.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD1760TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low VCE (sat) Complementary to 2SB11840.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type TransistorsNPN Transistors2SD1766SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V High-speed switching.0.42 0.10.46 0.1 Complements to 2SB11881.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector

2SD1766NPN TransistorsSMD Ty p e Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V3 High-speed switching.2 Complements to 2SB11881 1.Base2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VC

2SD1766Medium Power Transistor Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). hFE Classification Absolute Maximum Ratings Ta = 25 *1. Pw=20ms. *2. 40X40X 0.7mm Ceramic board. Electrical Characteristics Ta = 25 REV.08 1 of 1

isc Silicon NPN Power Transistor 2SD1761DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1187Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1763ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SB1186AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1760DESCRIPTIONLow Collector Saturation Voltage-: V = 0.5V(Typ)@ I = 2ACE(sat) CComplements the 2SB1184Good Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1763DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SB1186Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMU

isc Silicon NPN Darlington Power Transistor 2SD1765DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.) @I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min.) @ I = 1A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1764DESCRIPTIONHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CBullt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned forr MotorRelay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1185Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

isc Silicon NPN Darlington Power Transistor 2SD1769DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for solenoid d