2SD1762 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD1762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min.) (BR)CEO Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1185 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 0.5 0.1 0.55 0.1 Structure 2.3 0.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collec

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Units mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 4.0 high current, IC=0.7A. 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) (3) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emi

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 /

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features External dimensions (Units mm) 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3 +0.2 6.5 0.2 -0.1 C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 Structure 0.5 0.1 0.55 0.1 2.3 0.2 2

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES High Breakdown Voltage and Current 4 Excellent DC Current Gain Linearity Complementary to 2SB1189 1 2 3 B C A E CLASSIFICATION OF hFE E C Product-Rank 2SD1767-P 2SD1767-Q 2SD1767-R B D

2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free D-Pack (TO-252) FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184 CLASSIFICATION OF hFE A Product-Rank 2SD1760-P 2SD1760-Q 2SD1760-R C B D Range 82 180 120 270 180 390

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1189 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR (NPN) TO-252-2L FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 1. BASE Complements the 2SB1184. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1766 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) 2. COLLECTOR Complements to 2SB1188 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector

Equivalent C circuit B Darlington 2SD1769 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol Symbol 2SD1769 Unit Conditions 2SD1769 Unit 0.2 4.8 0.2 10.2 0.

2SD1766 TRANSISTOR (NPN) FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 40 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2

2SD1761(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low collector saturation voltage Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation PC=30W(TC=25 ) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in

2SD1760(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5

2SD1766 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) MIN 0.53 Complements to 2SB1188 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

FM120-M WILLAS THRU 2SD1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR c(NPN) ss design, excellent power dissipation offers Bat h proce b FEATURES etter reverse leakage current and thermal resistance. SOT-89 SOD-123H Low profile surfa

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

SMD Type Transistors NPN Transistors 2SD1767 1.70 0.1 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 0.42 0.1 0.46 0.1 Complementary to 2SB1189 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SD1760 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE (sat) Complementary to 2SB1184 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type Transistors NPN Transistors 2SD1766 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V High-speed switching. 0.42 0.1 0.46 0.1 Complements to 2SB1188 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector

2SD1766 NPN Transistors SMD Ty p e Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V 3 High-speed switching. 2 Complements to 2SB1188 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VC

2SD1766 Medium Power Transistor Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). hFE Classification Absolute Maximum Ratings Ta = 25 *1. Pw=20ms. *2. 40X40X 0.7mm Ceramic board. Electrical Characteristics Ta = 25 REV.08 1 of 1

isc Silicon NPN Power Transistor 2SD1761 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1187 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1763A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SB1186A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1760 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Typ)@ I = 2A CE(sat) C Complements the 2SB1184 Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SB1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMU

isc Silicon NPN Darlington Power Transistor 2SD1765 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 1A CE(sat) C High DC Current Gain h = 1000(Min.) @ I = 1A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1764 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor Relay and Solenoid driver ap

isc Silicon NPN Darlington Power Transistor 2SD1769 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for solenoid d