2SD177M - Даташиты. Аналоги. Основные параметры

Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB1193 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Rat

Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification Unit mm For TV vertical deflection output 10.0 0.2 4.2 0.2 Complementary to 2SB1192 and 2SB1192A 5.5 0.2 2.7 0.2 Features 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolu

Power Transistors 2SD1776, 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm Features High foward current transfer ratio hFE 10.0 0.2 4.2 0.2 Satisfactory linearity of foward current transfer ratio hFE 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0

Power Transistors 2SD1775, 2SD1775A Silicon NPN triple diffusion planar type Unit mm For high-speed switching and high current amplification ratio 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to the pr

Power Transistors 2SD1771, 2SD1771A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A Features 1.5max. 1.1max. High collector to emitter VCEO 0.8 0.1 0.5max. Large collector power dissipation PC N type package enabling direct soldering of the

isc Silicon NPN Darlington Power Transistor 2SD1773 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Complement to Type 2SB1193 Minimum Lot-to-Lot variations for robust device performance and reliable operation A

isc Silicon NPN Power Transistor 2SD1772 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Complement to Type 2SB1192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1778 DESCRIPTION High Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION With TO-220Fa package Complement to type 2SB1192/1192A Large collector power dissipation APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emit

isc Silicon NPN Power Transistor 2SD1770 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Complement to Type 2SB1190 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25