Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 200 V VCEO Collector-

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1789DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta =

2SD1781KDatasheetMedium Power Transistor (32V, 800mA)lOutlinelParameter Value SMT3VCEO32VIC800mASOT-346SC-59 lFeaturesl1)Very low VCE(sat).lInner circuitl VCE(sat)=0.1V(Typ.)(IC/IB=500mA/50mA)2)Higt current capacity in compact package.3)Complements the 2SB1197K.lApplicationl

2SD1782KFRA2SD1782KTransistors AEC-Q101 QualifiedPower Transistor (80V, 0.5A) 2SD1782K2SD1782KFRA External dimensions (Unit : mm) Features 1) Low VCE(sat).2.90.2VCE(sat) =0.2V(Typ.) 1.1+0.21.90.2 -0.1(IC / IB=0.5 A / 50mA) 0.80.10.95 0.952) High VCEO,VCEO=80V (1) (2)0~0.12SB1198KFRA3) Complements the 2SB1198K. (3)+0.10.15-0.06+0.10.4-0.0

2SD1782KDatasheetPower Transistor (80V, 500mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO80VIC500mASMT3lFeatures lInner circuitl l1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA)2)High breakdown voltage. BVCEO=80V3)Complements the 2SB1198KlApplicationlDRIVERlPackaging specificationslBasic

TransistorsPower Transistor (80V, 0.5A)2SD1782KFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 0.5A / 50mA)2) High VCEO, VCEO = 80V3) Complements the 2SB1198K.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-222-D93)271Transistors 2SD1782KFElectrical characteristics (Ta = 25_

2SD1781KFRA2SD1781KTransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.8A) 2SD1781K2SD1781KFRA External dimensions (Unit : mm) Features1) Very Low VCE(sat).2.90.2VCE(sat) = 0.1V(Typ.) 1.1+0.21.90.2 -0.1 IC / IB= 500 A / 50mA 0.80.10.95 0.952) High current capacity in compact package.(1) (2)0~0.13) Complements the 2SB1197K2SB1197K.(3)+0

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTCs advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte

2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat)

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SD1782 TRANSISTOR (NPN)FEATURES 1. BASE Low VCE(sat)2. EMITTER High BVCEO3. COLLECTOR Complements the 2SB1198MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1788 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 100 V VCEO Collector-

Equivalent CcircuitBDarlington 2SD1785(2.5k)(200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20(TO220F)Symbol 2SD1785 Unit Symbol Conditions 2SD1785 Unit

2SD1781K SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low voltage High saturation current capability 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem

SMD Type TransistorsNPN Transistors2SD1781 (2SD1781K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Very Low VCE(sat). High current capacity in compact package. Complimentary to 2SB1197(2SB1197K) 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit C

SMD Type TransistorsNPN Transistors2SD1782SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect

SMD Type TransistorsNPN Transistors2SD1784SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=30V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

CHENMKO ENTERPRISE CO.,LTD2SD1781KGPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1500mA). * Suitable for high packing density.* Low voltage (Max.=32V) .* High satur

2SD1781Plastic-Encapsulate TransistorsSOT-23 (NPN) FEATURES Very low VCE(sat). VCE(sat)

2SD1781KSilicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197KExcellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 42SD1781KELECTRICAL CHARACTERISTICS @ Ta=25 unle

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1788DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1783DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputsta

isc Silicon NPN Darlington Power Transistor 2SD1785DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEComplement to Type 2SB1258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL