INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1793DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

Ordering number:EN2110BNPN Epitaxial Planar Silicon Transistor2SD1799Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2045B[2SD1799]6.5Features2.35.00.54 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

Equivalent CcircuitBBuilt-in Avalanche Diode for Surge AbsorbingDarlington 2SD1796(3k)(150)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)SymbolSymbol 2SD1796 Unit Conditions 2SD1796 Unit

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1791 Case : ITO-220(TP7L10) Unit : mm7A NPNRATINGSAbsolute Maximum Ratings ConditionsItem Symbol Ratings UnitStorage Temperature Tstg -55+150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 VCollector to Emitter Voltage VCEO 100 VEmitter to Base VoltageVEBO 7 VCollector Current DC I

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UN

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1790DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1791DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M