Биполярный транзистор 2SD1804T
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1804T
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 180
MHz
Ёмкость коллекторного перехода (Cc): 65
pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
TO251
Аналоги (замена) для 2SD1804T
2SD1804T
Datasheet (PDF)
7.1. Size:158K sanyo
2sd1804.pdf 
Ordering number:EN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]Features Low collector-to-emitter saturation voltage. High current and high fT.
7.2. Size:235K utc
2sd1804.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1* Excellent linerarity of hFE. TO-251* Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1TO-252 ORDERING INFORMATIO
7.3. Size:1057K kexin
2sd1804.pdf 
SMD Type TransistorsNPN Transistors2SD1804TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1204+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
7.4. Size:212K inchange semiconductor
2sd1804.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804DESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching appl
7.5. Size:205K inchange semiconductor
2sd1804l-t.pdf 
isc Silicon NPN Power Transistor 2SD1804L-TDESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching applicationsABSOLUTE MA
7.6. Size:195K inchange semiconductor
2sd1804-t.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804-TDESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current s
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