Ordering number:EN2116BNPN Epitaxial Planar Silicon Transistor2SD1806High-Current Switching ApplicationsApplications Package Dimensions Relay control, motor control, switching. unit:mm2045BFeatures [2SD1806]6.5 Low saturation voltage. 2.35.00.54 On-chip diode between collector and emitter. Small and slim package permitting 2SD1806-appliedsets to be made

Ordering number:EN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number:EN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle

Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

Ordering number:EN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

Ordering number:EN2111BNPN Epitaxial Planar Silicon Transistor2SD1800Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2045B[2SD1800]6.5Features2.35.00.54 High DC current gain (hFE 4000). Large current capacity. Small and slim package making it easy to make2SD1800-applied sets

Ordering number:EN2115BNPN Epitaxial Planar Silicon Transistor2SD1805High-Current Switching ApplicationsApplications Package Dimensions Strobes, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SD1805]6.5Features2.35.00.54 Low saturation voltage. Fast switching time. Large current capacity. Small and slim package making it easy to

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number:EN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

Ordering number : EN2115C2SD1805Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single TP/TP-FAApplications Strobes, voltage regulators, relay drivers, lamp driversFeatures Low saturation voltage Fast switching time Large current capacity Small and slim package making it easy to make 2SD1805-applied sets smallerSpecificationsAbsolute

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1* Excellent linerarity of hFE. TO-251* Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1TO-252 ORDERING INFORMATIO

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

2SD1802(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1802NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage60VCEOVCollector-Emitter Voltage 50VEBOVEmitter-Base Voltage 6.0Collector CurrentICA3.0Collector Power Dissipation PD 1.0 WJunction TemperatureTj-55 to +

SMD Type TransistorsNPN Transistors2SD1802TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO0.127+0.10.80-0.1max Complementary to 2SB1202+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter

SMD Type TransistorsNPN Transistors2SD1804TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1204+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol

SMD Type TransistorsNPN Transistors2SD1801TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 -0.7-0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed.0.127 Complementary to 2SB12010.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Pa

SMD Type TransistorsNPN Transistors2SD1805TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.10.80-0.1 Large current capacity max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Par

SMD Type TransistorsNPN Transistors2SD1803TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1203+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1802DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make2SD1802/ 2SB1202-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804DESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching appl

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1801DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make 2SD1801/2SB1201-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1805DESCRIPTIONHigh current capacitySmall and slim package making it easy to make 2SD1805-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobes,voltage regu

isc Silicon NPN Power Transistors 2SD180DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable for

isc Silicon NPN Power Transistor 2SD1804L-TDESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching applicationsABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804-TDESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current s

isc Silicon NPN Power Transistor 2SD1803DESCRIPTIONHigh Collector Current-I = 5.0ACLow Saturation Voltage -: V = 0.4V(Max)@ I = 3.0A, I = 0.15ACE(sat) C BGood Linearity of hFEComplement to Type 2SB1203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high-speed inverters,converters,and other general