2SD1806 - описание и поиск аналогов

Ordering number EN2116B NPN Epitaxial Planar Silicon Transistor 2SD1806 High-Current Switching Applications Applications Package Dimensions Relay control, motor control, switching. unit mm 2045B Features [2SD1806] 6.5 Low saturation voltage. 2.3 5.0 0.5 4 On-chip diode between collector and emitter. Small and slim package permitting 2SD1806-applied sets to be made

Ordering number EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number EN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1204/2SD1804] Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle

Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

Ordering number EN2111B NPN Epitaxial Planar Silicon Transistor 2SD1800 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2045B [2SD1800] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Large current capacity. Small and slim package making it easy to make 2SD1800-applied sets

Ordering number EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications Package Dimensions Strobes, voltage regulators, relay drivers, lamp unit mm drivers. 2045B [2SD1805] 6.5 Features 2.3 5.0 0.5 4 Low saturation voltage. Fast switching time. Large current capacity. Small and slim package making it easy to

Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number EN2115C 2SD1805 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single TP/TP-FA Applications Strobes, voltage regulators, relay drivers, lamp drivers Features Low saturation voltage Fast switching time Large current capacity Small and slim package making it easy to make 2SD1805-applied sets smaller Specifications Absolute

2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1 TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1 * Excellent linerarity of hFE. TO-251 * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1 TO-252 ORDERING INFORMATIO

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L 2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

2SD1802(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 60 VCEO V Collector-Emitter Voltage 50 VEBO V Emitter-Base Voltage 6.0 Collector Current IC A 3.0 Collector Power Dissipation PD 1.0 W Junction Temperature Tj -55 to +

SMD Type Transistors NPN Transistors 2SD1802 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO 0.127 +0.1 0.80-0.1 max Complementary to 2SB1202 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter

SMD Type Transistors NPN Transistors 2SD1804 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1204 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

SMD Type Transistors NPN Transistors 2SD1801 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed. 0.127 Complementary to 2SB1201 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

SMD Type Transistors NPN Transistors 2SD1805 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 0.80-0.1 Large current capacity max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Par

SMD Type Transistors NPN Transistors 2SD1803 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1203 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1802 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804 DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching appl

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1801 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1805 DESCRIPTION High current capacity Small and slim package making it easy to make 2SD1805-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobes,voltage regu

isc Silicon NPN Power Transistors 2SD180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier and low speed switching Suitable for

isc Silicon NPN Power Transistor 2SD1804L-T DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804-T DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current s

isc Silicon NPN Power Transistor 2SD1803 DESCRIPTION High Collector Current-I = 5.0A C Low Saturation Voltage - V = 0.4V(Max)@ I = 3.0A, I = 0.15A CE(sat) C B Good Linearity of h FE Complement to Type 2SB1203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high-speed inverters,converters, and other general