2SD1812 - Даташиты. Аналоги. Основные параметры

Ordering number EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] Features Low collector-to-emitter saturation voltage. Good linearity o

Ordering number EN2369A NPN Epitaxial Planar Silicon Transistor 2SD1817 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2045B Features [2SD1817] 6.5 High DC current gain. 2.3 5.0 0.5 4 Small and slim package permitting the 2SD1817- applied sets to be made more compact. 0.85 0.7 1.2 1 Base 0.6 0.5 2 Co

Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). A L Complementary to 2SB1218A 3 3 Top View C B 1 1 2 2 APPLICATION K E General purpose amplification. D H

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note) Symbol Parameter Value Unit VCBO Collector-

SMD Type Transistors NPN Transistors 2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO

SMD Type Transistors NPN Transistors 2SD1816 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127 +0.1 0.80-0.1 max Complementary to 2SB1216 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratin

SMD Type Transistors NPN Transistors 2SD1815 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High fT. 0.80-0.1 max Complementary to 2SB1215 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Rati

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1816 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage High f T Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,H

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other general

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1815 DESCRIPTION Excellent linearity of h FE Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller Low collector-to-emitter saturation voltage High f T Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT