2SD1825 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1825 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hFE): 4000
Корпус транзистора: TO220F
Аналоги (замена) для 2SD1825
- подборⓘ биполярного транзистора по параметрам
2SD1825 даташит
..1. Size:149K sanyo
2sd1825.pdf 
Ordering number EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, and constant-voltage regulators. 2041A [2SB1223/2SD1825] Features High DC current gain. Large current capacity and wide ASO. Micaless package
..2. Size:209K inchange semiconductor
2sd1825.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1825 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1223 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-vol
8.1. Size:135K sanyo
2sd1827.pdf 
Ordering number EN2211B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1225/2SD1827 Driver Applications Applications Package Dimensions Suitable for use in cotrol of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1225/2SD1827] Features High DC current gain. Large current capacity and wide ASO. Low
8.2. Size:153K sanyo
2sd1829.pdf 
Ordering number EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-votlage 2041A regulators. [2SB1227/2SD1829] Features High DC current gain. Large current capacity and wide ASO. L
8.3. Size:152K sanyo
2sd1826.pdf 
Ordering number EN2210B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1224/2SD1826 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1224/2SD1826] Features High DC current gain. Large current capacity and wide ASO. M
8.4. Size:142K sanyo
2sd1828.pdf 
Ordering number EN2212B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1226/2SD1828 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2041A [2SB1226/2SD1828] Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.
8.5. Size:40K panasonic
2sd1823 e.pdf 
Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th
8.6. Size:39K panasonic
2sd1820.pdf 
Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M
8.7. Size:40K panasonic
2sd1821 e.pdf 
Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.
8.8. Size:37K panasonic
2sd1821.pdf 
Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.
8.9. Size:38K panasonic
2sd1824.pdf 
Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing
8.10. Size:43K panasonic
2sd1820 e.pdf 
Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M
8.11. Size:36K panasonic
2sd1823.pdf 
Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th
8.12. Size:42K panasonic
2sd1824 e.pdf 
Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing
8.13. Size:960K kexin
2sd1820.pdf 
SMD Type Transistors NPN Transistors 2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A
8.14. Size:894K kexin
2sd1821.pdf 
SMD Type Transistors NPN Transistors 2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB1220 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur
8.15. Size:962K kexin
2sd1820a.pdf 
SMD Type Transistors NPN Transistors 2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A
8.16. Size:210K inchange semiconductor
2sd1827.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1827 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1225 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an
8.17. Size:210K inchange semiconductor
2sd1829.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1829 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1227 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,
8.18. Size:210K inchange semiconductor
2sd1826.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1826 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 3.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1224 APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.19. Size:185K inchange semiconductor
2sd1828.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1828 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1226 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in motor drivers, printer hammer drivers, r
Другие транзисторы: 2SD182, 2SD1820, 2SD1820A, 2SD1821, 2SD1821A, 2SD1822, 2SD1823, 2SD1824, TIP41, 2SD1826, 2SD1827, 2SD1828, 2SD1829, 2SD183, 2SD1830, 2SD1831, 2SD1832
