Биполярный транзистор 2SD1843 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1843
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO128
2SD1843 Datasheet (PDF)
2sd1843.pdf
DATA SHEETDARLINGTON POWER TRANSISTOR2SD1843NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm)dumper diode in collector to emitter and zener diode in collector tobase. This transistor is ideal for use in acuator drives such asmo
2sd1841.pdf
Ordering number:EN3260A2SB1231 : PNP Epitaxial Planar Silicon Transistor2SD1841 : NPN Triple Diffused Planar Silicon Transistor2SB1231/2SD1841100V/25A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1231/2SD1841]Features Large current capacity and wi
2sd1842.pdf
Ordering number:EN3261A2SB1232 : PNP Epitaxial Planar Silicon Transistor2SD1842 : NPN Triple Diffused Planar Silicon Transistor2SB1232/2SD1842100V/40A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1232/2SD1842]Features Large current capacity and wi
2sd1840.pdf
Ordering number:EN32592SB1230 : PNP Epitaxial Planar Silicon Transistor2SD1840 : NPN Triple Diffused Planar Silicon Transistor2SB1230/2SD1840100V/4A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters and otherunit:mmgeneral high-current switching applications.2022A[2SB1230/2SD1840]Features Large current capacity and wide
2sd1846.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1846.pdf
isc Silicon NPN Power Transistor 2SD1846DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1848.pdf
isc Silicon NPN Power Transistor 2SD1848DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1841.pdf
isc Silicon NPN Power Transistor 2SD1841DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1231Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, relay drivers, converters andother general high-current
2sd1845.pdf
isc Silicon NPN Power Transistor 2SD1845DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1849.pdf
isc Silicon NPN Power Transistor 2SD1849DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1840.pdf
isc Silicon NPN Power Transistor 2SD1840DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalhigh-current switching appl
2sd1847.pdf
isc Silicon NPN Power Transistor 2SD1847DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
