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isc Silicon NPN Power Transistor 2SD1846DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Ordering number:EN3260A2SB1231 : PNP Epitaxial Planar Silicon Transistor2SD1841 : NPN Triple Diffused Planar Silicon Transistor2SB1231/2SD1841100V/25A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1231/2SD1841]Features Large current capacity and wi

Ordering number:EN3261A2SB1232 : PNP Epitaxial Planar Silicon Transistor2SD1842 : NPN Triple Diffused Planar Silicon Transistor2SB1232/2SD1842100V/40A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1232/2SD1842]Features Large current capacity and wi

Ordering number:EN32592SB1230 : PNP Epitaxial Planar Silicon Transistor2SD1840 : NPN Triple Diffused Planar Silicon Transistor2SB1230/2SD1840100V/4A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters and otherunit:mmgeneral high-current switching applications.2022A[2SB1230/2SD1840]Features Large current capacity and wide

DATA SHEETDARLINGTON POWER TRANSISTOR2SD1843NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm)dumper diode in collector to emitter and zener diode in collector tobase. This transistor is ideal for use in acuator drives such asmo

isc Silicon NPN Power Transistor 2SD1848DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1841DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1231Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, relay drivers, converters andother general high-current

isc Silicon NPN Power Transistor 2SD1845DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1849DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1840DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalhigh-current switching appl

isc Silicon NPN Power Transistor 2SD1847DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV