2SD185 datasheet, аналоги, основные параметры
Наименование производителя: 2SD185 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.8 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO8
Аналоги (замена) для 2SD185
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2SD185 даташит
0.1. Size:93K sanyo
2sd1851.pdf 
Ordering number EN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2018A High DC current gain. [2SB1234/2SD1851] Very small-sized package permitting sets to be made smaller and slimer. C Collector B Base E Emitter ( )
0.2. Size:67K sanyo
2sd1854.pdf 
Ordering number EN2353 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1854 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2006B Features [2SD1854] 6.0 4.7 High DC current gain. 5.0 Darlington connection. 0.5 0.6 0.5 0.5 1 Emitter 2 Collector 1 2 3 3 Base EIAJ SC-51 1.45 1.45 SANYO MP Sp
0.3. Size:96K sanyo
2sd1852.pdf 
Ordering number EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2033 High DC current gain. [2SB1235/2SD1852] B Base C Collector E Emitter ( ) 2SB1235 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C
0.4. Size:74K sanyo
2sd1853.pdf 
Ordering number EN2506 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1853 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2003B Features [2SD1853] 5.0 High DC current gain. 4.0 4.0 Low saturation voltage. 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3
0.5. Size:34K rohm
2sc4132 2sd1857.pdf 
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) RO
0.6. Size:69K rohm
2sd1767 2sd1859.pdf 
2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collec
0.7. Size:63K rohm
2sd2211 2sd1918 2sd1857a.pdf 
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
0.9. Size:138K rohm
2sd1858.pdf 
Medium Power Transistor (32V, 1A) 2SD1858 Features Dimensions (Unit mm) 1) Low VCE(sat) = 0.15V(Typ.) + (lC / lB = 500mA / 50mA) 2.5 0.2 + - 6.8 0.2 - 2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor + 0.5 0.1 - (1) (2) (3) 2.54 2.54 + 1.05 0.45 0.1 - (1) Emitter (2) Collector (3) Base ROHM ATV Absolute maximum ratin
0.11. Size:247K utc
2sd1857.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S * High breakdown voltage.(BV =120V) CEO * Low collector output capacitance.(Typ.20pF at V =10V) CB * High transition frequency.(f =80MHz) T 1 1 TO-92 TO-92NL 1 1 TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin
0.12. Size:746K blue-rocket-elect
2sd1857.pdf 
2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications , ,
0.14. Size:884K kexin
2sd1851.pdf 
SMD Type Transistors NPN Transistors 2SD1851 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=50V C +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SB1234 +0.1 1.9 -0.1 B 1.Base 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col
0.15. Size:188K inchange semiconductor
2sd1856.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1856 DESCRIPTION High DC Current Gain h = 2000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 2A CE(sat) C Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor Relay and Solenoid driver ap
0.16. Size:210K inchange semiconductor
2sd1850.pdf 
isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co
0.17. Size:206K inchange semiconductor
2sd1857.pdf 
isc Silicon NPN Power Transistor 2SD1857 DESCRIPTION High breakdown voltage. (BV = 120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SB1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifier
0.18. Size:217K inchange semiconductor
2sd1855.pdf 
isc Silicon NPN Power Transistor 2SD1855 DESCRIPTION High Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Другие транзисторы: 2SD1843, 2SD1844, 2SD1845, 2SD1846, 2SD1847, 2SD1848, 2SD1849, 2SD184F, BC546, 2SD1850, 2SD1851, 2SD1852, 2SD1853, 2SD1854, 2SD1855, 2SD1856, 2SD1857
