isc Silicon NPN Power Transistor 2SD1850DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

Ordering number:EN2553APNP/NPN Epitaxial Planar Silicon Transistors2SB1234/2SD1851Driver ApplicationsFeatures Package Dimensions AF amplifier, solenoid drivers, LED drivers.unit:mm Darlington connection.2018A High DC current gain.[2SB1234/2SD1851] Very small-sized package permitting sets to be madesmaller and slimer.C : CollectorB : BaseE : Emitter( )

Ordering number:EN2353NPN Epitaxial Planar Silicon Darlington Transistor2SD1854Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2006BFeatures [2SD1854]6.04.7 High DC current gain. 5.0 Darlington connection.0.50.60.5 0.51 : Emitter2 : Collector1 2 33 : BaseEIAJ : SC-511.45 1.45SANYO : MPSp

Ordering number:EN2554APNP/NPN Epitaxial Planar Silicon Transistors2SB1235/2SD1852Driver ApplicationsFeatures Package Dimensions AF amplifier, solenoid drivers, LED drivers.unit:mm Darlington connection.2033 High DC current gain.[2SB1235/2SD1852]B : BaseC : CollectorE : Emitter( ) : 2SB1235SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN2506NPN Epitaxial Planar Silicon Darlington Transistor2SD1853Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2003BFeatures [2SD1853]5.0 High DC current gain.4.04.0 Low saturation voltage.0.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3JEDEC : TO-92EIAJ : SC-431.3

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1)3) High transition frequency. (fT = 80MHz) (2)4) Complements the 2SB1236. (3)(1) Base(Gate)(2) Collector(Drain)RO

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767high current, IC=0.7A. 4.01.0 2.5 0.52) Complements the 2SB1189 / 2SB1238. (1)(2) Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollec

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Medium Power Transistor (32V, 1A) 2SD1858 Features Dimensions (Unit : mm) 1) Low VCE(sat) = 0.15V(Typ.) +(lC / lB = 500mA / 50mA) 2.5 0.2+ -6.8 0.2-2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor +0.5 0.1-(1) (2) (3)2.54 2.54+1.05 0.45 0.1-(1) Emitter(2) Collector (3) BaseROHM : ATVAbsolute maximum ratin

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S* High breakdown voltage.(BV =120V) CEO* Low collector output capacitance.(Typ.20pF at V =10V) CB* High transition frequency.(f =80MHz) T11TO-92 TO-92NL11TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin

2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,,

2SD1857D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,

SMD Type TransistorsNPN Transistors2SD1851SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=50VC+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SB1234 +0.11.9 -0.1B1.Base2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1856DESCRIPTIONHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 2ACE(sat) CBullt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned forr MotorRelay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1857DESCRIPTIONHigh breakdown voltage. (BV = 120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SB1236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifier

isc Silicon NPN Power Transistor 2SD1855DESCRIPTIONHigh Collector Current:: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY