2SD1855 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD1855 DESCRIPTION High Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Ordering number EN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2018A High DC current gain. [2SB1234/2SD1851] Very small-sized package permitting sets to be made smaller and slimer. C Collector B Base E Emitter ( )

Ordering number EN2353 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1854 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2006B Features [2SD1854] 6.0 4.7 High DC current gain. 5.0 Darlington connection. 0.5 0.6 0.5 0.5 1 Emitter 2 Collector 1 2 3 3 Base EIAJ SC-51 1.45 1.45 SANYO MP Sp

Ordering number EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2033 High DC current gain. [2SB1235/2SD1852] B Base C Collector E Emitter ( ) 2SB1235 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN2506 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1853 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2003B Features [2SD1853] 5.0 High DC current gain. 4.0 4.0 Low saturation voltage. 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) RO

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collec

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Medium Power Transistor (32V, 1A) 2SD1858 Features Dimensions (Unit mm) 1) Low VCE(sat) = 0.15V(Typ.) + (lC / lB = 500mA / 50mA) 2.5 0.2 + - 6.8 0.2 - 2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor + 0.5 0.1 - (1) (2) (3) 2.54 2.54 + 1.05 0.45 0.1 - (1) Emitter (2) Collector (3) Base ROHM ATV Absolute maximum ratin

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S * High breakdown voltage.(BV =120V) CEO * Low collector output capacitance.(Typ.20pF at V =10V) CB * High transition frequency.(f =80MHz) T 1 1 TO-92 TO-92NL 1 1 TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin

2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications , ,

SMD Type Transistors NPN Transistors 2SD1851 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=50V C +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SB1234 +0.1 1.9 -0.1 B 1.Base 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1856 DESCRIPTION High DC Current Gain h = 2000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 2A CE(sat) C Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor Relay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1857 DESCRIPTION High breakdown voltage. (BV = 120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SB1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifier