2SD1857 - Даташиты. Аналоги. Основные параметры

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) RO

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S * High breakdown voltage.(BV =120V) CEO * Low collector output capacitance.(Typ.20pF at V =10V) CB * High transition frequency.(f =80MHz) T 1 1 TO-92 TO-92NL 1 1 TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin

2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications , ,

isc Silicon NPN Power Transistor 2SD1857 DESCRIPTION High breakdown voltage. (BV = 120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SB1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifier

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277