Биполярный транзистор 2SD1883 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1883
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: ISO247
2SD1883 Datasheet (PDF)
2sd1883.pdf
Ordering number:EN2430NPN Triple Diffused Planar Silicon Transistor2SD1883Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1883]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
2sd1883.pdf
isc Silicon NPN Power Transistor 2SD1883DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1886.pdf
Ordering number:EN2433NPN Triple Diffused Planar Silicon Transistor2SD1886Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1886]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
2sd1882.pdf
Ordering number:EN2429NPN Triple Diffused Planar Silicon Transistor2SD1882Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1882]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
2sd1881.pdf
Ordering number:EN2428ANPN Triple Diffused Planar Silicon Transistor2SD1881Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1881]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
2sd1885.pdf
Ordering number:EN2432ANPN Triple Diffused Planar Silicon Transistor2SD1885Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1885]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
2sd1887.pdf
Ordering number:EN2434NPN Triple Diffused Planar Silicon Transistor2SD1887Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1887]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
2sd1886c.pdf
Ordering number : EN72012SD1886CSANYO SemiconductorsDATA SHEETwww.datasheet4u.comNPN Triple Diffused Planar Silicon Transistor2SD1886CColor TV Horizontal DeflectionOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=
2sd1884.pdf
Ordering number:EN2431NPN Triple Diffused Planar Silicon Transistor2SD1884Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1884]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
2sd1880.pdf
Ordering number:EN2427ANPN Triple Diffused Planar Silicon Transistor2SD1880Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1880]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
2sd1889.pdf
isc Silicon NPN Darlington Power Transistor 2SD1889DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA
2sd1886.pdf
isc Silicon NPN Power Transistor 2SD1886DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1882.pdf
isc Silicon NPN Power Transistor 2SD1882DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1881.pdf
isc Silicon NPN Power Transistor 2SD1881DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)
2sd1885c.pdf
isc Silicon NPN Power Transistor 2SD1885CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sd188.pdf
isc Silicon NPN Power Transistors 2SD188DESCRIPTIONWith TO-3 packageLarge current capabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emi
2sd1885.pdf
isc Silicon NPN Power Transistor 2SD1885DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1887.pdf
isc Silicon NPN Power Transistor 2SD1887DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1888.pdf
isc Silicon NPN Darlington Power Transistor 2SD1888DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1339Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA
2sd1886c.pdf
isc Silicon NPN Power Transistor 2SD1886CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sd1884.pdf
isc Silicon NPN Power Transistor 2SD1884DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sd1880.pdf
isc Silicon NPN Power Transistor 2SD1880DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050