2SD1899 - описание и поиск аналогов

 ..1. Size:291K  nec
 2sd1899.pdf 

 ..2. Size:856K  jiangsu
 2sd1899.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

 ..3. Size:577K  lge
 2sd1899.pdf 

2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

 ..4. Size:608K  wietron
 2sd1899.pdf 

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Tempera

 ..5. Size:216K  inchange semiconductor
 2sd1899.pdf 

isc Silicon NPN Power Transistor 2SD1899 DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V

 0.1. Size:991K  jiangsu
 2sd1899-z.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

 0.2. Size:56K  transys
 2sd1899-z.pdf 

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM 2 W (Tamb=25 ) 2. COLLECTOR Collector current 3. EMITTER ICM 3 A 1 2 3 Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARA

 0.3. Size:600K  lge
 2sd1899-z.pdf 

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

 0.4. Size:609K  blue-rocket-elect
 2sd1899l.pdf 

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

 0.5. Size:207K  inchange semiconductor
 2sd1899-k.pdf 

isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM

 0.6. Size:213K  inchange semiconductor
 2sd1899-z.pdf 

isc Silicon NPN Power Transistor 2SD1899-Z DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V