2SD1917 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1917 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 20000
Корпус транзистора: TO126
Аналоги (замена) для 2SD1917
- подборⓘ биполярного транзистора по параметрам
2SD1917 даташит
8.3. Size:701K sanyo
2sd1912.pdf 
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8.4. Size:595K sanyo
2sd1914.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res
8.5. Size:34K sanyo
2sb1274 2sd1913.pdf 
Ordering number ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br
8.6. Size:63K rohm
2sd2211 2sd1918 2sd1857a.pdf 
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
8.8. Size:143K rohm
2sd1918.pdf 
Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 Absolute maximum ratings (Ta = 25 C) 2.5 9.5 Parameter Symbol Limits Unit
8.9. Size:100K wingshing
2sd1910.pdf 
2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co
8.10. Size:100K wingshing
2sd1911.pdf 
Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V C
8.11. Size:1071K kexin
2sd1918.pdf 
SMD Type Transistors NPN Transistors 2SD1918 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High breakdown voltage. Low collector output capacitance. 0.127 High transition frequency +0.1 0.80-0.1 max Complementary to 2SB1275 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Max
8.12. Size:217K inchange semiconductor
2sd1912.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(
8.13. Size:213K inchange semiconductor
2sd1913.pdf 
isc Silicon NPN Power Transistor 2SD1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1274 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.14. Size:214K inchange semiconductor
2sd1910.pdf 
isc Silicon NPN Power Transistor 2SD1910 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.15. Size:189K inchange semiconductor
2sd1918.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1918 DESCRIPTION High fT fT=80MHz(TYP) High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Excellent linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATI
8.16. Size:214K inchange semiconductor
2sd1911.pdf 
isc Silicon NPN Power Transistor 2SD1911 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
Другие транзисторы: 2SD1912S, 2SD1913, 2SD1913Q, 2SD1913R, 2SD1913S, 2SD1914, 2SD1915, 2SD1916, TIP35C, 2SD1918, 2SD1919, 2SD192, 2SD1920, 2SD1921, 2SD1922, 2SD1923, 2SD1924
