2SD1932 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

Ordering number EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2033 [2SB1296/2SD1936] Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO. B Base C Collector ( ) 2SB

Ordering number EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2018A [2SB1295/2SD1935] Features Large current capacity. Low collector to emitter saturation voltage. Very small-size

Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1297 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45

Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm 0.40+0.10 0.05 For muting 0.16+0.10 0.06 3 For DC-DC converter Features Low ON resistance Ron 1 2 High forward current transfer ratio hFE (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 2.90+0.20 automatic insertion t

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete

2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications

SMD Type Transistors NPN Transistors 2SD1938 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

SMD Type Transistors NPN Transistors 2SD1935 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB1295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas

isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1342 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT