Биполярный транзистор 2SD1936V - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1936V
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 480
Корпус транзистора: TO92
2SD1936V Datasheet (PDF)
2sd1936.pdf
Ordering number:EN2468PNP/NPN Epitaxial Planar Silicon Transistors2SB1296/2SD1936AF Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2033[2SB1296/2SD1936]Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO.B : BaseC : Collector( ) : 2SB
2sd1936m.pdf
2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications
2sd1935.pdf
Ordering number:EN2516PNP/NPN Epitaxial Planar Silicon Transistors2SB1295/2SD1935Low-Frequency General-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2018A[2SB1295/2SD1935]Features Large current capacity. Low collector to emitter saturation voltage. Very small-size
2sd1937 e.pdf
Transistor2SD1937Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB12975.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45
2sd1938.pdf
Transistors2SD1938(F)Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mm0.40+0.100.05For muting0.16+0.100.063For DC-DC converter Features Low ON resistance Ron1 2 High forward current transfer ratio hFE(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.12.90+0.20automatic insertion t
2sd1934.pdf
Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete
2sd1934 e.pdf
Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete
2sd1938.pdf
SMD Type TransistorsNPN Transistors2SD1938SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll
2sd1935.pdf
SMD Type TransistorsNPN Transistors2SD1935SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB12951 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas
2sd1932.pdf
isc Silicon NPN Darlington Power Transistor 2SD1932DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2sd1933.pdf
isc Silicon NPN Darlington Power Transistor 2SD1933DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1342Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050