2SD199 datasheet, аналоги, основные параметры
Наименование производителя: 2SD199 📄📄
Маркировка: DO
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 550 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO3
Аналоги (замена) для 2SD199
- подборⓘ биполярного транзистора по параметрам
2SD199 даташит
0.1. Size:334K 1
2sd1994 2sd1994a.pdf 
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten
0.2. Size:332K 1
2sd1991 2sd1991a.pdf 
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten
0.3. Size:92K sanyo
2sd1998.pdf 
Ordering number EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between collector and [2SB1324/2SD1998] emitter. Large current capacity. Small-sized package making it easy to
0.4. Size:22K sanyo
2sd1999.pdf 
Ordering number EN3175 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1325/2SD1999 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between base and emitter. [2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi
0.5. Size:86K sanyo
2sd1997.pdf 
Ordering number EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions Contains input resistance (R1), base-to-emitter unit mm resistance (RBE). 2038 Contains diode between collector and emitter. [2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making
0.6. Size:45K panasonic
2sd1993 e.pdf 
Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol
0.7. Size:43K panasonic
2sd1996.pdf 
Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.
0.8. Size:45K panasonic
2sd1995 e.pdf 
Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut
0.9. Size:69K panasonic
2sd1994.pdf 
Transistors 2SD1994A Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification and driver amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1322A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A +0.1 0.45-0.05 Allo
0.10. Size:67K panasonic
2sd1992.pdf 
Transistors 2SD1992A Silicon NPN epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1321A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol
0.11. Size:40K panasonic
2sd1993.pdf 
Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol
0.12. Size:52K panasonic
2sd1992a e.pdf 
Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Unit mm Complementary to 2SB1321A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Par
0.13. Size:49K panasonic
2sd1996 e.pdf 
Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.
0.14. Size:54K panasonic
2sd1991a e.pdf 
Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati
0.15. Size:54K panasonic
2sd1994a e.pdf 
Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1322A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 2 to 3W is obtained with a complementary pair with 0.65 max. 2SB1322A. Allowing supply with the radial ta
0.16. Size:49K panasonic
2sd1991.pdf 
Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati
0.17. Size:40K panasonic
2sd1995.pdf 
Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut
0.18. Size:355K jiangsu
2sd1991a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter
0.19. Size:458K jiangsu
2sd1994a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Co
0.20. Size:251K lge
2sd1991a.pdf 
2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V
0.21. Size:989K kexin
2sd1998.pdf 
SMD Type Transistors NPN Transistors 2SD1998 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 0.46 0.1 Complementary to 2SB1324 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi
0.22. Size:583K kexin
2sd1999.pdf 
SMD Type Transistors NPN Transistors 2SD1999 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte
0.23. Size:989K kexin
2sd1997.pdf 
SMD Type Transistors NPN Transistors 2SD1997 1.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB1323 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col
Другие транзисторы: 2SD1984, 2SD1985, 2SD1986, 2SD1987, 2SD1988, 2SD1989, 2SD198A, 2SD198P, A940, 2SD1990, 2SD1991, 2SD1992A, 2SD1993, 2SD1994, 2SD1995, 2SD1996, 2SD1997
