Биполярный транзистор 2SD1998 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1998
Маркировка: D_DM
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: SOT89
2SD1998 Datasheet (PDF)
2sd1998.pdf
Ordering number:EN3130PNP/NPN Epitaxial Planar Silicon Transistors2SB1324/2SD1998Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between collector and[2SB1324/2SD1998]emitter. Large current capacity. Small-sized package making it easy to
2sd1998.pdf
SMD Type TransistorsNPN Transistors2SD19981.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.10.46 0.1 Complementary to 2SB1324 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi
2sd1994 2sd1994a.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
2sd1991 2sd1991a.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
2sd1999.pdf
Ordering number:EN3175PNP/NPN Epitaxial Planar Silicon Transistors2SB1325/2SD1999Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi
2sd1997.pdf
Ordering number:EN3129PNP/NPN Epitaxial Planar Silicon Transistors2SB1323/2SD1997Compact Motor Driver ApplicationsFeatures Package Dimensions Contains input resistance (R1), base-to-emitterunit:mmresistance (RBE).2038 Contains diode between collector and emitter.[2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making
2sd1993 e.pdf
Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol
2sd1996.pdf
Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.
2sd1995 e.pdf
Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut
2sd1994.pdf
Transistors2SD1994ASilicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification and driver amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1322A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with2SB1322A+0.1 0.45-0.05 Allo
2sd1992.pdf
Transistors2SD1992ASilicon NPN epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SB1321A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol
2sd1993.pdf
Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol
2sd1992a e.pdf
Transistor2SD1992ASilicon NPN epitaxial planer typeFor low-frequency power strengthening and driveUnit: mmComplementary to 2SB1321A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Par
2sd1996 e.pdf
Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.
2sd1991a e.pdf
Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati
2sd1994a e.pdf
Transistor2SD1994ASilicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB1322A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 2 to 3W is obtained with a complementary pair with0.65 max.2SB1322A.Allowing supply with the radial ta
2sd1991.pdf
Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati
2sd1995.pdf
Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut
2sd1991a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter
2sd1994a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Co
2sd1991a.pdf
2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V
2sd1999.pdf
SMD Type TransistorsNPN Transistors2SD19991.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base2.CollectorRBE 3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte
2sd1997.pdf
SMD Type TransistorsNPN Transistors2SD19971.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB13230.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS