2SD2014 - Даташиты. Аналоги. Основные параметры

Equivalent C circuit B Darlington 2SD2014 (3k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2014 Symbol Conditions 2SD2014 Unit 4.2 Uni

isc Silicon NPN Darlington Power Transistor 2SD2014 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Complement to Type 2SB1257 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit mm Low saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation PC = 25 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60+25 V

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 15 k 0.5 k 2 3 (Typ) (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current IC 1.5 A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2012 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain 3. EMITTER 1 2 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Driver for solenoid Relay and motor General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

C Equivalent circuit B Darlington 2SD2016 (2k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor Application Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 200 V ICBO VCB=200V 10ma

Equivalent C circuit B Darlington 2SD2015 (3k ) (500 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SD2015 Symbol 2SD2015 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=150V

Equivalent C circuit B Darlington 2SD2017 (4k ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Symbol 2SD2017 Symbol Conditions 2SD2017 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300

isc Silicon NPN Darlington Power Transistor 2SD2016 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1A, V = 4V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter, relay and

isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for drive

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD201 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching application

isc Silicon NPN Darlington Power Transistor 2SD2017 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of d

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION High DC Current Gain- h = 100 (Min)@ I = 0.5A FE C Low Saturation Voltage- V = 1.0V (Max) CE(sat) High Power Dissipation P = 25 W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier