2SD1957TransistorsTransistors2SD2061(94L-919D301)(94L-1016-D304)315

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors2SD2061 TRANSISTOR (NPN) TO-220F1. BASEFEATURES 2. COLLECTOR Low Saturation Voltage3. EMITTER Excellent DC Current Gain Characteristice123 Equivalent Circuit 2SD2061=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code2SD206

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION With TO-220Fa package Low saturation voltage Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol

2SD2061(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

isc Silicon NPN Power Transistor 2SD2061DESCRIPTIONLow Collector Saturation Voltage: V = 0.3V(TYP.) @ I = 2ACE(sat) CCollector Power Dissipation: P = 30W (Max)CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

Transistor2SD2067 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 Large peak collector current ICP.0.450.052.5 0.5 2.5 0.5High collector to emitter voltage VCEO.1 2 3Allowing supp

Power Transistors2SD2064Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB137115.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTOptimum for the output stage of a HiFi aud

Transistor2SD2067 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 Large peak collector current ICP.0.450.052.5 0.5 2.5 0.5High collector to emitter voltage VCEO.1 2 3Allowing supp

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2060 DESCRIPTION With TO-220F package Complement to type 2SB1368 Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A Collector power dissipation: PC=25W(TC=25) APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 si

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2066DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh transition frequency(f )TWide area of satety operationComplement to Type 2SB1373Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high

isc Silicon NPN Power Transistor 2SD2060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = 1.7V(Max)@ (I = 3A, I = 0.3A)CE(sat) C BComplement to Type 2SB1368Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2062DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 2SD2065DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1372Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO