Справочник транзисторов. 2SD2071

 

Биполярный транзистор 2SD2071 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD2071
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO92

 Аналоги (замена) для 2SD2071

 

 

2SD2071 Datasheet (PDF)

 ..1. Size:53K  panasonic
2sd2071 e.pdf

2SD2071
2SD2071

Transistor2SD2071Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB13772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with0.65 max.2SB1377.Allowing supply with the radial taping.+

 8.1. Size:222K  1
2sd2070.pdf

2SD2071
2SD2071

 8.2. Size:211K  toshiba
2sd2075.pdf

2SD2071
2SD2071

 8.3. Size:219K  toshiba
2sd2079.pdf

2SD2071
2SD2071

 8.4. Size:244K  toshiba
2sd2075a.pdf

2SD2071
2SD2071

 8.5. Size:44K  panasonic
2sd2074.pdf

2SD2071
2SD2071

Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.

 8.6. Size:49K  panasonic
2sd2074 e.pdf

2SD2071
2SD2071

Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.

 8.7. Size:196K  inchange semiconductor
2sd2079.pdf

2SD2071
2SD2071

isc Silicon NPN Darlington Power Transistor 2SD2079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 3A, I = 6mA)CE(sat) C BComplement to Type 2SB1381Minimum Lot-to-Lot variations for robust deviceperformance and reliable oper

 8.8. Size:193K  inchange semiconductor
2sd207.pdf

2SD2071
2SD2071

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD207DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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