Equivalent CcircuitBDarlington 2SD2083(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)Application : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2083 Unit Symbol Conditions 2SD2083 Unit0.24.80.415.60.1

isc Silicon NPN Darlington Power Transistor 2SD2083DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 12A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver of solenoid, motor and generalpurpose

2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2082 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1382 APPLICATIONS Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25) SYMBOL PARAMETER COND

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol

Equivalent CcircuitBDarlington 2SD2082(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2082 Symbol Conditions 2SD2082 UnitUnit0.20.2 5.515.60.2

Equivalent CcircuitBDarlington 2SD2081(2k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions 2SD2081 UnitSymbol 2SD2081 Unit0.24.20.210.1c0.5

isc Silicon NPN Darlington Power Transistor 2SD2082DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000( Min.) @(I = 8A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 8A, I = 16mA)CE(sat) C BComplement to Type 2SB1382Minimum Lot-to-Lot variations for robust deviceperformance and reliable o

isc Silicon NPN Power Transistor 2SD2089DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Darlington Power Transistor 2SD2081DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1259Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplications