2SD2088 - описание и поиск аналогов

2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2082 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1382 APPLICATIONS Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMBOL PARAMETER COND

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

Equivalent C circuit B Darlington 2SD2082 (2k ) (100 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) Application Driver for Solenoid, Motor and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2082 Symbol Conditions 2SD2082 Unit Unit 0.2 0.2 5.5 15.6 0.2

Equivalent C circuit B Darlington 2SD2083 (2k ) (100 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) Application Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2083 Unit Symbol Conditions 2SD2083 Unit 0.2 4.8 0.4 15.6 0.1

Equivalent C circuit B Darlington 2SD2081 (2k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) Application Driver for Solenoid, Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions 2SD2081 Unit Symbol 2SD2081 Unit 0.2 4.2 0.2 10.1 c0.5

isc Silicon NPN Darlington Power Transistor 2SD2082 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000( Min.) @(I = 8A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 8A, I = 16mA) CE(sat) C B Complement to Type 2SB1382 Minimum Lot-to-Lot variations for robust device performance and reliable o

isc Silicon NPN Darlington Power Transistor 2SD2083 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = 12A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, motor and general purpose

isc Silicon NPN Power Transistor 2SD2089 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Darlington Power Transistor 2SD2081 DESCRIPTION High DC Current Gain- h = 2000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1259 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications