2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2082 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1382 APPLICATIONS Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25) SYMBOL PARAMETER COND

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol

Equivalent CcircuitBDarlington 2SD2082(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2082 Symbol Conditions 2SD2082 UnitUnit0.20.2 5.515.60.2

Equivalent CcircuitBDarlington 2SD2083(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)Application : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2083 Unit Symbol Conditions 2SD2083 Unit0.24.80.415.60.1

Equivalent CcircuitBDarlington 2SD2081(2k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions 2SD2081 UnitSymbol 2SD2081 Unit0.24.20.210.1c0.5

isc Silicon NPN Darlington Power Transistor 2SD2082DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000( Min.) @(I = 8A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 8A, I = 16mA)CE(sat) C BComplement to Type 2SB1382Minimum Lot-to-Lot variations for robust deviceperformance and reliable o

isc Silicon NPN Darlington Power Transistor 2SD2083DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 12A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver of solenoid, motor and generalpurpose

isc Silicon NPN Power Transistor 2SD2089DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Darlington Power Transistor 2SD2081DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1259Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplications