2SD2098 / 2SD2118 / 2SD2097TransistorsLow VCE(sat) transistor (strobe flash)2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features1) Low VCE(sat).2SD2098+0.2VCE(sat) = 0.25V (Typ.) 4.5-0.1+0.21.51.60.1 -0.1(IC/IB = 4A / 0.1A)2) Excellent DC current gain characteristics.3) Complements the 2SB1386 / 2SB1412 / 2SB1326.(1) (2) (3)0.4+0.1-0.05

TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES 1. BASE Excellent DC current gain characteristics Complements the 2SB1386 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Vol

2SD2098 FEATURESSOT-89 Excellent DC current gain characteristics Complements the 2SB1386 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 50 V3. EMITTER 3 VCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power

2SD2098 SOT-89 Features1. BASE SOT-892. COLLECTOR 1 4.6B2 4.41.61.83. EMITTER 1.41.43 Features2.64.252.43.75 Excellent DC current gain characteristics 0.8MIN Complements the 2SB1386 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Param

2SD2098NPN Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValueVdcCollector-Emitter Voltage 20VCEOVdcCollector-Base Voltage 50VCBOEmitter-Base Voltage VEBO 6.0 VdcIAdc(DC)C5.0Collector CurrentICP 10 Adc (Pulse)(1)PCCollector Power Dissipation 0.5 WTj , Tstg %CJuncti

SMD Type TransistorsNPN Transistors2SD20981.70 0.1 Features Excellent DC current gain characteristics Complements the 2SB13860.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Curren

CHENMKO ENTERPRISE CO.,LTD2SD2098PGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. ( DPAK )DPAK* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability..094 (2.38).086 (2.19).022 (0.55).018 (0.45)CONSTRUCTION* NPN Cilicon Tran

CHENMKO ENTERPRISE CO.,LTD2SD2098GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.