Биполярный транзистор 2SD2102 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2102
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15000
Корпус транзистора: TO220FM
2SD2102 Datasheet (PDF)
2sd2102.pdf
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2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2100.pdf
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Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov
2sd2104.pdf
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2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol
2sd2106.pdf
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2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle
2sd2108.pdf
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2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2107.pdf
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2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d
2sd2101.pdf
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2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo
2sd2101.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op
2sd2100.pdf
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SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt
2sd2104.pdf
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Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo
2sd2105.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2106.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2108.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr
2sd2107.pdf
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isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sd2101.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
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