Биполярный транзистор 2SD2102 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2102
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15000
Корпус транзистора: TO220FM
2SD2102 Datasheet (PDF)
2sd2102.pdf
2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2100.pdf
Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov
2sd2104.pdf
2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol
2sd2106.pdf
2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle
2sd2108.pdf
2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2107.pdf
2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d
2sd2101.pdf
2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo
2sd2101.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op
2sd2100.pdf
SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt
2sd2104.pdf
Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo
2sd2105.pdf
isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2106.pdf
isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2108.pdf
isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr
2sd2107.pdf
isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sd2101.pdf
isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050