Ordering number:EN3239NPN Epitaxial Planar Silicon Transistor2SD2120General Driver ApplicationsFeatures Package Dimensions Darlington connection (Contains bias resistance,unit:mmdamper diode).2064A High DC current gain.[2SD2120]2.5 Less dependence of DC current gain on temperature.1.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base

2SD2121(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1407(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L TypeAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5V

2SD2122(L)/(S), 2SD2123(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1409(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SD2122(L)/(S), 2SD2123(L)/(S)Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) UnitCollector to base voltage VC

2SD2124(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineDPAK42, 44112ID1. Base3 2. Collector3. EmitterS Type 12 6 k 0.5 k4. Collector3(Typ) (Typ)L Type 32SD2124(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter

SMD Type TransistorsNPN Transistors2SD2121TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features 0.50 -0.7 Low frequency power amplifier Complementary to 2SB14070.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2SD2125DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD2128DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo

isc Silicon NPN Darlington Power Transistor 2SD2129DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power swi