Transistors2SD2177Silicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency output amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1434 Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Ccomplementary pair with 2SB1434 Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.51 2 3 Abso

Transistor2SD2177Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14342.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1434. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Transistor2SD2177ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3

Ordering number:EN3196NPN Epitaxial Planar Silicon Transistor2SD2176Motor Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm On-chip Zener diode of 60 10V between collector2038Aand base.[2SD2176] High inductive load handling capability.4.5 Small-sized package.1.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector

2SD2170TransistorsMedium Power Transistor+20(Motor, Relay drive) (90 , 2A)-102SD2170 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.4.02) Zener diode has low dispersion.1.0 2.5 0.53) Strong protection against reverse power surges due to(1)"L" loads.(2)4) Darlington connection for high DC current gain. (3)(1) Base(Gat

Transistor2SD2179Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1446. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Transistor2SD2179Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1446. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Power Transistors2SD2178Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings Ta = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collecto

SMD Type TransistorsNPN Transistors2SD21701.70 0.1 Features Built-in zener diode between collector and base. Zener diode has low dispersion. Darlington connection for high DC current gain.0.42 0.10.46 0.1 Built-in resistor between base and emitter.C1.Base2.Collector3.EmitterBR1 3.5kR2 300 R1 R2E Absolute Maximum Ratings Ta = 25

SMD Type TransistorsNPN Transistors2SD2176SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

RoHS 2SD2137 2SD2137 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current 1 2 3 ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter