2SD2253Silicon NPN Triple Diffused Power TransistorGENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TVHigh Speed Switching ApplicationsTO-3PMQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-Base voltageVCB0 - - 1700 VCollector-emitter voltage (open base)VCEO - 600 VCollector current (DC)IC - 6 ACollector curren

isc Silicon NPN Power Transistor 2SD2253DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 1

Ordering number:EN3741ANPN Triple Diffused Planar Silicon Transistor2SD2251Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2251] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1

Ordering number:EN3320NPN Triple Diffused Planar Silicon Transistor2SD2252Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD2252]16.05.6Features3.43.1 High-speed : tf=100ns. High breakdown voltage : VCBO=1500V. High r

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

Power Transistors2SD2250Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149020.0 0.5 5.0 0.33.0FeaturesOptimum for 80W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2255Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB149315.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

2SD2256Silicon NPN Triple DiffusedADE-208-928 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB1494Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diodeOutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SD2256Absolute Maximum Ratings (Ta = 25C)Item

isc Silicon NPN Darlington Power Transistor 2SD2250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2251DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Darlington Power Transistor 2SD2257DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEComplement to Type 2SB1495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsHammer drive, p